Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

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The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits.We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source.We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be SHOPSTORM_HIDDEN_PRODUCT embedded as gain materials.The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.

01 μm3, while the resonance has a wavelength of 1537 nm.We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity Walking Dead to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region.